NST847BDP6 Datasheet, Equivalent, Cross Reference Search
Type Designator: NST847BDP6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.42 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 0.1 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT-963
NST847BDP6 Transistor Equivalent Substitute - Cross-Reference Search
NST847BDP6 Datasheet (PDF)
nst847bdp6.pdf
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst847bdp6t5g.pdf
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount www.onsemi.comapplications
nst847bpdp6.pdf
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface
nst846bmx2 nst847amx2 nst847bmx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASENPN Silicon2NST846BMX2,EMITTERNST847AMX2,NST847BMX2 3Features1 Moisture Sensitivity Level: 12 ESD Rating - Human Body Model: > 4000 VX2DFN3 (1.0x0.6)ESD Rating - Machine Model: > 350 VCASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RA
nst847bf3.pdf
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst847bf3t5g.pdf
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst847bpdp6t5g.pdf
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
