Биполярный транзистор NST848BF3T5G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NST848BF3T5G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.347 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT-1123
Аналоги (замена) для NST848BF3T5G
NST848BF3T5G Datasheet (PDF)
nst848bf3t5g.pdf
NST848BF3T5GNPN General PurposeTransistorThe NST848BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures
nst848bf3.pdf
NST848BF3T5GNPN General PurposeTransistorThe NST848BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures
nst846bf3-d.pdf
NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures
nst847bpdp6.pdf
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface
nst846bmx2 nst847amx2 nst847bmx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASENPN Silicon2NST846BMX2,EMITTERNST847AMX2,NST847BMX2 3Features1 Moisture Sensitivity Level: 12 ESD Rating - Human Body Model: > 4000 VX2DFN3 (1.0x0.6)ESD Rating - Machine Model: > 350 VCASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RA
nst847bf3.pdf
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst847bf3t5g.pdf
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst847bdp6t5g.pdf
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount www.onsemi.comapplications
nst847bdp6.pdf
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst847bpdp6t5g.pdf
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mo
nst846bf3t5g.pdf
NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123www.onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures 3
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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