Справочник транзисторов. NST848BF3T5G

 

Биполярный транзистор NST848BF3T5G Даташит. Аналоги


   Наименование производителя: NST848BF3T5G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.347 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT-1123
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NST848BF3T5G Datasheet (PDF)

 ..1. Size:154K  onsemi
nst848bf3t5g.pdfpdf_icon

NST848BF3T5G

NST848BF3T5GNPN General PurposeTransistorThe NST848BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

 5.1. Size:108K  onsemi
nst848bf3.pdfpdf_icon

NST848BF3T5G

NST848BF3T5GNPN General PurposeTransistorThe NST848BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

 9.1. Size:109K  onsemi
nst846bf3-d.pdfpdf_icon

NST848BF3T5G

NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

 9.2. Size:101K  onsemi
nst847bpdp6.pdfpdf_icon

NST848BF3T5G

NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface

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History: ZTX302M | NSVF4009SG4

 

 
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