BUJD203AD datasheet, аналоги, основные параметры

Наименование производителя: BUJD203AD  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 850 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 850 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 12.5

Корпус транзистора: DPAK

 Аналоги (замена) для BUJD203AD

- подборⓘ биполярного транзистора по параметрам

 

BUJD203AD даташит

 ..1. Size:214K  nxp
 bujd203ad.pdf pdf_icon

BUJD203AD

BUJD203AD NPN power transistor with integrated diode Rev. 01 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Surface-mountable package H

 ..2. Size:294K  cn ween semi
 bujd203ad.pdf pdf_icon

BUJD203AD

BUJD203AD NPN power transistor with integrated diode 23 July 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti- parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode

 6.1. Size:159K  nxp
 bujd203a.pdf pdf_icon

BUJD203AD

BUJD203A NPN power transistor with integrated diode Rev. 02 2 December 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High

 6.2. Size:200K  nxp
 bujd203ax.pdf pdf_icon

BUJD203AD

BUJD203AX NPN power transistor with integrated diode Rev. 01 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package. 1.2 Features and benefits Fast switching Isolated package High voltage capa

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BUJ303AD, BUJ303AX, BUJ303B, BUJ303CD, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, 9014, BUJD203AX, BUT11APX-1200, MX0912B251Y, MX0912B351Y, MZ0912B100Y, MZ0912B50Y, 3CA649, 3CA649A