All Transistors. BUJD203AD Datasheet

 

BUJD203AD Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUJD203AD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 850 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 12.5
   Noise Figure, dB: -
   Package: DPAK

 BUJD203AD Transistor Equivalent Substitute - Cross-Reference Search

   

BUJD203AD Datasheet (PDF)

 ..1. Size:214K  nxp
bujd203ad.pdf

BUJD203AD
BUJD203AD

BUJD203ADNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Surface-mountable package H

 ..2. Size:294K  cn ween semi
bujd203ad.pdf

BUJD203AD
BUJD203AD

BUJD203ADNPN power transistor with integrated diode23 July 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode

 6.1. Size:159K  nxp
bujd203a.pdf

BUJD203AD
BUJD203AD

BUJD203ANPN power transistor with integrated diodeRev. 02 2 December 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High

 6.2. Size:200K  nxp
bujd203ax.pdf

BUJD203AD
BUJD203AD

BUJD203AXNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.1.2 Features and benefits Fast switching Isolated package High voltage capa

 6.3. Size:1058K  cn ween semi
bujd203a.pdf

BUJD203AD
BUJD203AD

BUJD203ANPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low

 6.4. Size:778K  cn ween semi
bujd203ax.pdf

BUJD203AD
BUJD203AD

BUJD203AXNPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) "full pack" plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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