Биполярный транзистор PBHV8215Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBHV8215Z
Маркировка: V8215Z
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 350 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 33 MHz
Ёмкость коллекторного перехода (Cc): 17 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT223
Аналоги (замена) для PBHV8215Z
PBHV8215Z Datasheet (PDF)
pbhv8215z.pdf
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PBHV8215Z150 V, 2 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 11 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9215Z.1.2 Features High voltage Low collector-emitt
pbhv8215z.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8118t.pdf
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PBHV8118T180 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs
pbhv8140z.pdf
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PBHV8140Z500 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9540Z.1.2 Features High voltage Low collector-emitt
pbhv8115z.pdf
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PBHV8115Z150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 9 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115Z.1.2 Features High voltage Low collector-emitter
pbhv8540t.pdf
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PBHV8540T500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 14 January 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040T.1.2 Features High voltage Low collector-emitter sa
pbhv8115tlh.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8115x.pdf
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PBHV8115X150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor9 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115X.2. Features and benefits High voltage Low collector-emitter s
pbhv8118t.pdf
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PBHV8118T180 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs
pbhv8540x.pdf
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PBHV8540X500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor5 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040X.2. Features and benefits High voltage Low collector-emitter
pbhv8140z.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8540z.pdf
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PBHV8540Z500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040Z.1.2 Features High voltage Low collector-emitt
pbhv8515qa.pdf
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PBHV8515QA150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor19 November 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic packagewith visible and solderable side pads.PNP complement: PBHV9515QA.2. Features and benefits
pbhv8115z.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8540t.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8560z.pdf
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PBHV8560Z600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor13 March 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9560Z2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi
pbhv8115t.pdf
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PBHV8115T150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 4 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115T.1.2 Features High voltage Low collector-emitter satu
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