PBHV8215Z Specs and Replacement

Type Designator: PBHV8215Z

SMD Transistor Code: V8215Z

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.45 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 33 MHz

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT223

 PBHV8215Z Substitution

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PBHV8215Z datasheet

 ..1. Size:155K  philips

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PBHV8215Z

PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9215Z. 1.2 Features High voltage Low collector-emitt... See More ⇒

 ..2. Size:272K  nxp

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PBHV8215Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.1. Size:164K  philips

pbhv8118t.pdf pdf_icon

PBHV8215Z

PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs... See More ⇒

 9.2. Size:152K  philips

pbhv8140z.pdf pdf_icon

PBHV8215Z

PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9540Z. 1.2 Features High voltage Low collector-emitt... See More ⇒

Detailed specifications: 3CA80A, 3CA80B, 3CA80C, 3CA80D, 3CA80E, PBHV8115T, PBHV8115Z, PBHV8140Z, 431, PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T, PBHV9115T, PBHV9115Z, PBHV9215Z

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