Биполярный транзистор PBLS6002D
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBLS6002D
Маркировка: F2
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.6
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
SC74
Аналоги (замена) для PBLS6002D
PBLS6002D
Datasheet (PDF)
..1. Size:138K nxp
pbls6002d.pdf PBLS6002D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.1. Size:137K nxp
pbls6003d.pdf PBLS6003D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.2. Size:137K nxp
pbls6004d.pdf PBLS6004D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.3. Size:137K nxp
pbls6005d.pdf PBLS6005D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.4. Size:136K nxp
pbls6001d.pdf PBLS6001D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPNResistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device(SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
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