DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS2540M40 V, 0.5 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet40 V, 0.5 A PBSS2540MNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS2540MB40 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 1 4 April 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.1.2 Features and benefits Leadless ultra small SMD plasti

PBSS2540E40 V, 500 mA NPN low VCEsat (BISS) transistorRev. 02 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.PNP complement: PBS3540E.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS2515FNPN transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationNPN transistor PBSS2515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (automotive,telecom and audio video) such as

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS2515VS15 V low VCE(sat) NPN double transistorProduct data sheet 2004 Dec 23Supersedes data of 2001 Nov 07NXP Semiconductors Product data sheet15 V low VCE(sat) NPN double transistorPBSS2515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac

PBSS2515E15 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 02 21 April 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS3515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageMBD128PBSS2515YPN15 V low VCE(sat) NPN/PNP transistorProduct data sheet 2005 Jan 11Supersedes data of 2002 May 08NXP Semiconductors Product data sheet15 V low VCE(sat) NPN/PNP transistorPBSS2515YPNFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current cap

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS2515M15 V, 0.5 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 15Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet15 V, 0.5 A PBSS2515MNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

PBSS2515MB15 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 1 26 January 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515MB.1.2 Features and benefits Leadless ultra small SMD plastic High

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS2515VPN15 V low VCEsat NPN/PNPtransistorProduct specification 2001 Nov 07Supersedes data of 2001 Aug 31Philips Semiconductors Product specification15 V low VCEsat NPN/PNP transistorPBSS2515VPNFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin packa