PBSS301NX12 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PX.1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS301ND20 V, 4 A NPN low VCEsat (BISS) transistorRev. 03 7 September 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PD.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS301NZ12 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain