Биполярный транзистор PBSS303PX - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS303PX
Маркировка: *5K
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130 MHz
Ёмкость коллекторного перехода (Cc): 110 pf
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора: SOT89
Аналоги (замена) для PBSS303PX
PBSS303PX Datasheet (PDF)
pbss303px.pdf
PBSS303PX30 V, 5.1 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303NX.1.2 Features Low collector-emitter saturation voltage VCEsa
pbss303pd.pdf
PBSS303PD60 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur
pbss303pz.pdf
PBSS303PZ30 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
pbss303nd.pdf
PBSS303ND60 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 14 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
pbss303nx.pdf
PBSS303NX30 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 01 23 August 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PX.1.2 Features Low collector-emitter saturation voltage VCEsat
pbss303nz.pdf
PBSS303NZ30 V, 5.5 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
