DISCRETE SEMICONDUCTORSDATA SHEETageMBD128PBSS4240Y40 V low VCEsat NPN transistorProduct specification 2001 Jul 13Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitter voltage 40 V Impr

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4240DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2003 Feb 20NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4240DPNFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatMAX. High collector current capability IC and ICMSYMBOL PARAMETER UNIT

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4240T40 V; 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet40 V; 2 A NPN low VCEsat PBSS4240T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4240X40 V, 2 A NPN low VCEsat (BISS) transistor15 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:PBSS5240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS4240V40 V low VCEsat NPN transistorProduct data sheet 2003 Jan 30NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4240VFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVCEO collector-emitter voltage

PBSS4240Z40 V, 2 A NPN low VCEsat (BISS) transistor16 October 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain