Биполярный транзистор PBSS4350X - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4350X
Маркировка: S43
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.55 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT89
Аналоги (замена) для PBSS4350X
PBSS4350X Datasheet (PDF)
pbss4350x.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4350X50 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Nov 04Supersedes data of 2003 Nov 21Philips Semiconductors Product specification50 V, 3 APBSS4350XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte
pbss4350x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4350d.pdf
DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D302PBSS4350D50 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit
pbss4350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability
pbss4350d 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS4350DNPN transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationNPN transistor PBSS4350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT
pbss4350t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPBSS4350T50 V; 3 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet50 V; 3 A NPN low VCEsat PBSS4350T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEs
pbss4350d.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4350spn.pdf
PBSS4350SPN50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistorRev. 01 5 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNPcomplement complementNXP NamePBSS4350
pbss4350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability
pbss4350ss.pdf
PBSS4350SS50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistorRev. 01 3 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementNXP NamePBSS4350S
pbss4350t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4350t.pdf
SMD Type TransistorsNPN TransistorsPBSS4350T (KBSS4350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation.1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9 -0.13 corresponding low RC
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050