All Transistors. PBSS4350X Datasheet

 

PBSS4350X Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS4350X
   SMD Transistor Code: S43
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.55 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT89

 PBSS4350X Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS4350X Datasheet (PDF)

 ..1. Size:127K  philips
pbss4350x.pdf

PBSS4350X
PBSS4350X

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4350X50 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Nov 04Supersedes data of 2003 Nov 21Philips Semiconductors Product specification50 V, 3 APBSS4350XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte

 ..2. Size:241K  nxp
pbss4350x.pdf

PBSS4350X
PBSS4350X

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:290K  philips
pbss4350d.pdf

PBSS4350X
PBSS4350X

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D302PBSS4350D50 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit

 6.2. Size:155K  philips
pbss4350z.pdf

PBSS4350X
PBSS4350X

DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability

 6.3. Size:76K  philips
pbss4350d 1.pdf

PBSS4350X
PBSS4350X

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS4350DNPN transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationNPN transistor PBSS4350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT

 6.4. Size:338K  philips
pbss4350t.pdf

PBSS4350X
PBSS4350X

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4350T50 V; 3 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet50 V; 3 A NPN low VCEsat PBSS4350T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEs

 6.5. Size:498K  nxp
pbss4350d.pdf

PBSS4350X
PBSS4350X

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.6. Size:122K  nxp
pbss4350spn.pdf

PBSS4350X
PBSS4350X

PBSS4350SPN50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistorRev. 01 5 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNPcomplement complementNXP NamePBSS4350

 6.7. Size:155K  nxp
pbss4350z.pdf

PBSS4350X
PBSS4350X

DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability

 6.8. Size:89K  nxp
pbss4350ss.pdf

PBSS4350X
PBSS4350X

PBSS4350SS50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistorRev. 01 3 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementNXP NamePBSS4350S

 6.9. Size:573K  nxp
pbss4350t.pdf

PBSS4350X
PBSS4350X

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.10. Size:1663K  kexin
pbss4350t.pdf

PBSS4350X
PBSS4350X

SMD Type TransistorsNPN TransistorsPBSS4350T (KBSS4350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation.1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9 -0.13 corresponding low RC

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