Биполярный транзистор PBSS5140V
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS5140V
Маркировка: 25
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 12
pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора:
SOT666
Аналоги (замена) для PBSS5140V
PBSS5140V
Datasheet (PDF)
..1. Size:249K philips
pbss5140v.pdf DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS5140V40 V low VCEsat PNP transistorProduct data sheet 2002 Mar 20Supersedes data of 2001 Oct 19NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll
6.1. Size:99K philips
pbss5140t.pdf PBSS5140T40 V, 1 A PNP low VCEsat BISS transistorRev. 04 29 July 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4140T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current
6.2. Size:55K philips
pbss5140t 1.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS5140TPNP BISS transistorProduct specification 2000 Nov 16Philips Semiconductors Product specificationPNP BISS transistor PBSS5140TFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low collector-emitter saturation voltage ensures1 basereduced power consumption.2 emitter3 collectorAPPLICATIONS
6.3. Size:270K philips
pbss5140u.pdf DISCRETE SEMICONDUCTORS DATA SHEETageM3D102PBSS5140U40 V low VCEsat PNP transistorProduct data sheet 2001 Jul 20Supersedes data of 2001 Mar 27NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitte
6.4. Size:216K nxp
pbss5140t.pdf Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.5. Size:477K nxp
pbss5140u.pdf Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.6. Size:360K blue-rocket-elect
pbss5140s.pdf PBSS5140S(BR3CG5140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching / Applications
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