PBSS5160DS - описание и поиск аналогов

PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sh

PBSS5160U 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS5160QA 60 V, 1 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4160QA. 2. Features and benefits Very low collector-emitter

PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. NPN/NPN complement PBSS4160PAN. 2. Features and benefits Very low collecto

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement PBSS4160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie

PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 24 November 2014 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits Very low collector-emitter saturation volt

SMD Type Transistors PNP Transistors PBSS5160T-HF (KBSS5160T-HF) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required

SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required 1.Base 2.E