Справочник транзисторов. PBSS5320D

 

Биполярный транзистор PBSS5320D - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PBSS5320D
   Маркировка: 52
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 50 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT457 SC74

 Аналоги (замена) для PBSS5320D

 

 

PBSS5320D Datasheet (PDF)

 ..1. Size:125K  philips
pbss5320d.pdf

PBSS5320D PBSS5320D

DISCRETE SEMICONDUCTORS DATA SHEETfpageMBD128PBSS5320D20 V low VCEsat PNP transistorProduct data sheet 2002 Jun 12NXP Semiconductors Product data sheet20 V low VCEsat PNP transistorPBSS5320DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitter voltage -20 V Improved

 ..2. Size:337K  nxp
pbss5320d.pdf

PBSS5320D PBSS5320D

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:171K  philips
pbss5320t.pdf

PBSS5320D PBSS5320D

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5320T20 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2002 Aug 08NXP Semiconductors Product data sheet20 V, 3 A PBSS5320TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsa

 6.2. Size:196K  philips
pbss5320x.pdf

PBSS5320D PBSS5320D

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5320X20 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Nov 27NXP Semiconductors Product data sheet20 V, 3 A PBSS5320XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

 6.3. Size:401K  nxp
pbss5320t.pdf

PBSS5320D PBSS5320D

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.4. Size:256K  nxp
pbss5320x.pdf

PBSS5320D PBSS5320D

PBSS5320X20 V, 3 A PNP low VCEsat (BISS) transistor27 May 2019 Product data sheet1. General descriptionPNP low VCEsat transistor in a medium power flat lead SOT89 plastic package.NPN complement: PBSS4320X2. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency le

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