PBSS5580PA80 V, 4 A PNP low VCEsat (BISS) transistorRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4580PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5520X20 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 08Supersedes data of 2004 Jun 23NXP Semiconductors Product data sheet20 V, 5 A PBSS5520XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5540X40 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jan 15NXP Semiconductors Product data sheet40 V, 5 A PBSS5540XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

PBSS5560PA60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 21 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4560PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS5540Z40 V low VCEsat PNP transistorProduct data sheet 2001 Sep 21Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilityVCEO emitter-collect

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PBSS5540ZPNP TransistorProduct specification 2000 Oct 25Supersedes data of 1999 Aug 04Philips Semiconductors Product specificationPNP Transistor PBSS5540ZFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 collectorAPPLICATIONS3 emitter Heavy duty battery powered equip

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5540X40 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jan 15NXP Semiconductors Product data sheet40 V, 5 A PBSS5540XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS5540Z40 V low VCEsat PNP transistorProduct data sheet 2001 Sep 21Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilityVCEO emitter-collect

SMD Type TransistorsPNP TransistorsPBSS5540Z (KBSS5540Z)1.70 0.1 Features Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation.0.42 0.10.46 0.1211.Base2.Collector33.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40

SMD Type TransistorsPNP TransistorsPBSS5540Z (KBSS5540Z)Unit:mmSOT-2236.500.23.000.1 Features4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation.1 2 32, 40.2502.30 (typ)Gauge Plane11.Base 2.Collector0.700.133.Emitter4.60 (typ) 4.Collector Absolute M