Биполярный транзистор PDTA144EE
Даташит. Аналоги
Наименование производителя: PDTA144EE
Маркировка: 7
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 3
pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
SOT416
Аналог (замена) для PDTA144EE
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PDTA144EE
Datasheet (PDF)
..1. Size:57K motorola
pdta144ee 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA144EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit
..2. Size:57K philips
pdta144ee 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA144EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit
0.1. Size:54K motorola
pdta144eef 1.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA144EEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
0.2. Size:54K philips
pdta144eef 1.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA144EEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
6.1. Size:58K motorola
pdta144eu 5.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA144EUPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
6.2. Size:58K motorola
pdta144es 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA144ESPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
6.3. Size:55K motorola
pdta144et 5.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA144ETPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
6.4. Size:57K motorola
pdta144ek 3.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA144EKPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3 Simplificatio
6.5. Size:58K philips
pdta144eu 5.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA144EUPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
6.6. Size:58K philips
pdta144es 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA144ESPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
6.7. Size:174K philips
pdta144e series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEETPDTA144E seriesPNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
6.8. Size:55K philips
pdta144et 5.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA144ETPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
6.9. Size:57K philips
pdta144ek 3.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA144EKPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3 Simplificatio
6.10. Size:2803K nxp
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf 
PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu
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History: MJL4302AG
| 2SC3845
