Биполярный транзистор PDTC143ET - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC143ET
Маркировка: *02_p02_t02_W02
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SOT23
Аналоги (замена) для PDTC143ET
PDTC143ET Datasheet (PDF)
pdtc143et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdtc143et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdtc143ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
pdtc143eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdtc143ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig
pdtc143es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
pdtc143ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
pdtc143eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdtc143ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig
pdtc143es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
pdtc143e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC143E seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 05Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
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