All Transistors. PDTC143ET Datasheet

 

PDTC143ET Datasheet, Equivalent, Cross Reference Search


   Type Designator: PDTC143ET
   SMD Transistor Code: *02_p02_t02_W02
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23

 PDTC143ET Transistor Equivalent Substitute - Cross-Reference Search

   

PDTC143ET Datasheet (PDF)

 ..1. Size:56K  motorola
pdtc143et 4.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 ..2. Size:56K  philips
pdtc143et 4.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 6.1. Size:57K  motorola
pdtc143ek 2.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

 6.2. Size:58K  motorola
pdtc143eu 3.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 6.3. Size:56K  motorola
pdtc143ee 2.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.4. Size:58K  motorola
pdtc143es 2.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

 6.5. Size:57K  philips
pdtc143ek 2.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

 6.6. Size:58K  philips
pdtc143eu 3.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

 6.7. Size:56K  philips
pdtc143ee 2.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.8. Size:58K  philips
pdtc143es 2.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

 6.9. Size:182K  philips
pdtc143e series.pdf

PDTC143ET
PDTC143ET

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143E seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 05Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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