Биполярный транзистор PDTC144VM
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC144VM
Маркировка: 66_G6
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 4.7
Максимальная рассеиваемая мощность (Pc): 0.25
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 2
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
SOT883
Аналоги (замена) для PDTC144VM
PDTC144VM
Datasheet (PDF)
6.1. Size:139K nxp
pdtc144v.pdf PDTC144V seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1. Product overviewType number Package PNP complementNXP JEITAPDTC144VE SOT416 SC-75 PDTA144VEPDTC144VK SOT346 SC-59A PDTA144VKPDTC144VM SOT883 SC-101 PDTA144VMPDTC144VS[1
6.2. Size:138K nxp
pdtc144vk pdtc144vs.pdf PDTC144V seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1. Product overviewType number Package PNP complementNXP JEITAPDTC144VE SOT416 SC-75 PDTA144VEPDTC144VK SOT346 SC-59A PDTA144VKPDTC144VM SOT883 SC-101 PDTA144VMPDTC144VS[1
7.1. Size:54K motorola
pdtc144eef 1.pdf DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
7.2. Size:55K motorola
pdtc144wt 3.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input
7.3. Size:58K motorola
pdtc144eu 3.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
7.4. Size:58K motorola
pdtc144es 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
7.5. Size:57K motorola
pdtc144wu 3.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input
7.6. Size:57K motorola
pdtc144ek 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
7.7. Size:56K motorola
pdtc144ee 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
7.8. Size:56K motorola
pdtc144et 5.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
7.9. Size:54K philips
pdtc144eef 1.pdf DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
7.10. Size:55K philips
pdtc144wt 3.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input
7.11. Size:58K philips
pdtc144eu 3.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
7.12. Size:58K philips
pdtc144es 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
7.13. Size:175K philips
pdtc144t series.pdf DISCRETE SEMICONDUCTORS DATA SHEETPDTC144T seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = openProduct data sheet 2004 Aug 17Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144T seriesR1 = 47 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S
7.14. Size:57K philips
pdtc144wu 3.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input
7.15. Size:183K philips
pdtc144w series.pdf DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
7.16. Size:182K philips
pdtc144e series.pdf DISCRETE SEMICONDUCTORS DATA SHEETPDTC144E seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
7.17. Size:57K philips
pdtc144ek 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
7.18. Size:56K philips
pdtc144ee 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
7.19. Size:56K philips
pdtc144et 5.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
7.20. Size:135K nxp
pdtc144tef pdtc144tk pdtc144ts.pdf DISCRETE SEMICONDUCTORS DATA SHEETPDTC144T seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = openProduct data sheet 2004 Aug 17Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144T seriesR1 = 47 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S
7.21. Size:139K nxp
pdtc144wef pdtc144wk pdtc144ws.pdf DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
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