Справочник транзисторов. PDTC144WM

 

Биполярный транзистор PDTC144WM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PDTC144WM
   Маркировка: DD
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 2.1
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 2.5 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT883

 Аналоги (замена) для PDTC144WM

 

 

PDTC144WM Datasheet (PDF)

 6.1. Size:55K  motorola
pdtc144wt 3.pdf

PDTC144WM
PDTC144WM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.2. Size:57K  motorola
pdtc144wu 3.pdf

PDTC144WM
PDTC144WM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.3. Size:55K  philips
pdtc144wt 3.pdf

PDTC144WM
PDTC144WM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.4. Size:57K  philips
pdtc144wu 3.pdf

PDTC144WM
PDTC144WM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

 6.5. Size:183K  philips
pdtc144w series.pdf

PDTC144WM
PDTC144WM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.6. Size:139K  nxp
pdtc144wef pdtc144wk pdtc144ws.pdf

PDTC144WM
PDTC144WM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

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