PHE13003C datasheet, аналоги, основные параметры

Наименование производителя: PHE13003C  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 2.1 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 9

Корпус транзистора: TO92

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PHE13003C даташит

 ..1. Size:254K  philips
 phe13003c.pdf pdf_icon

PHE13003C

PHE13003C NPN power transistor Rev. 1 29 July 2010 Preliminary data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain 1.3 Applications Compact fluorescent l

 ..2. Size:264K  cn ween semi
 phe13003c.pdf pdf_icon

PHE13003C

PHE13003C NPN power transistor 13 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses 3. Applications Compac

 6.1. Size:148K  philips
 phe13003a.pdf pdf_icon

PHE13003C

PHE13003A NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

 6.2. Size:50K  philips
 phe13003au 1.pdf pdf_icon

PHE13003C

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col

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Другие транзисторы: PEMH9, PEMT1, PEMX1, PEMZ1, PEMZ7, PHD13003C, PHD13005, PHE13003A, 2SD1047, PHE13005, PHE13005X, PHE13007, PHE13009, PIMD2, PIMD3, PIMH9, PIMN31