Биполярный транзистор PMBT2222 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PMBT2222
Маркировка: P1B_p1B_p1B_t1B_W1B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
PMBT2222 Datasheet (PDF)
pmbt2222 pmbt2222a.pdf
PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi
pmbt2222 pmbt2222a 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2222; PMBT2222ANPN switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 09Philips Semiconductors Product specificationNPN switching transistors PMBT2222; PMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO
pmbt2222 pmbt2222a.pdf
PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi
pmbt2222ays.pdf
PMBT2222AYS40 V, 600 mA, double NPN switching transistor24 June 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT2907AYS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V
pmbt2222aqa.pdf
PMBT2222AQA40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.PNP complement: PMBT2907AQA2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl
pmbt2222amb.pdf
PMBT2222AMB40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-MountedDevice (SMD) plastic package.PNP complement: PMBT2907AMB2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package
pmbt2222am.pdf
PMBT2222AM40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device(SMD) plastic package.PNP complement: PMBT2907AM2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
