STF826 - Даташиты. Аналоги. Основные параметры

STF826 STN826 PNP MEDIUM POWER TRANSISTORS Features SURFACE MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 IN COMPLIANCE WITH THE 2002/93/EC 3 EUROPEAN DIRECTIVE 2 1 Applications VOLTAGE REGULATION SOT-223 SOT-89 RELAY DRIVER GENERIC SWITCH Description Internal Schematic Diagram The STF826 and STN826 ar

Green Product STF8236 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 22.0 @ VGS=4.5V Suface Mount Package. 22.5 @ VGS=4.0V ESD Protected. 20V 6A 23.0 @ VGS=3.7V 25.0 @ VGS=3.1V 29.0 @ VGS=2.5V P IN 1 P I N

S T F 8220 S amHop Microelectronics C orp. Oct.23 2006 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( mW ) Max R ugged and reliable. 20 @ V G S = 4.0V 20V 7A S urface Mount Package. 28 @ V G S = 2.5V E S D P rotected. S2 Bottom Drain Contact S2 S1 4

Green Product STF8211 a S mHop Microelectronics C orp. Ver 1.5 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 13.5 @ VGS=4.0V Suface Mount Package. 20V 8A 20.0 @ VGS=2.5V ESD Protected. G2 Bottom Drain Contact (D1/D2) S2 3 4 G1 G2 S2 D1/D2 G1 S

Gree r r P Pr Pr Pro STF8209A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 22.0 @ VGS=4.5V Suface Mount Package. 23.0 @ VGS=4.0V 20V 6.5A 24.0 @ VGS=3.7V ESD Protected. 27.5 @ VGS=3.1V 33.5 @ VGS=2.5V Bot

Green Product STF8234 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 5.2 @ VGS=4.5V Suface Mount Package. 5.3 @ VGS=4.0V 20V 14A 5.4 @ VGS=3.7V ESD Protected. 5.9 @ VGS=3.1V 6.8 @ VGS=2.5V D D D D G G S T D

Gr P Pr P P STF8209 a S mHop Microelectronics C orp. Ver 2.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 22.0 @ VGS=4.5V Suface Mount Package. 22.5 @ VGS=4.0V 20V 6.5A 23.5 @ VGS=3.7V ESD Protected. 27.5 @ VGS=3.1V 33.5 @ VGS=2.5V G2 Bottom Drai

Green Product STF8233 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 7.2 @ VGS=4.5V Suface Mount Package. 7.5 @ VGS=4.0V 20V 11A 8.2 @ VGS=3.7V ESD Protected. 9.0 @ VGS=3.1V 10.2 @ VGS=2.5V G2 Bottom Drain Con

Green Product STF8204 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 9.0 @ VGS=4.5V Suface Mount Package. 9.5 @ VGS=4.0V 20V 9.5A 10.0 @ VGS=3.7V ESD Protected. 11.2 @ VGS=3.1V 13.5 @ VGS=2.5V G2 Bottom Drain C