Биполярный транзистор STL128DN - описание производителя. Основные параметры. Даташиты.
Наименование производителя: STL128DN
Маркировка: L128DN
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: TO220
STL128DN Datasheet (PDF)
stl128dn-dnfp stld128dnt4.pdf
STL128DNHigh voltage fast-switching NPN power transistorFeaturesTAB High voltage capability Low spread of dynamic parameters Very high switching speed33 Large RBSOA 2211 Integrated antiparallel collector-emitter diodeTO-220 TO-220FPTABApplications Electronic ballast for fluorescent lighting 31 Flyback and forward single transistor low
stl128d-dfp.pdf
STL128DHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parametersTAB Very high switching speed Integrated antiparallel collector-emitter diodeApplications 332211 Electronic ballast for fluorescent lightingTO-220TO-220FP Flyback and forward single transistor low power convertersDescript
stl120n2vh5.pdf
STL120N2VH5N-channel 20 V, 0.002 , 28 A STripFET V Power MOSFETin PowerFLAT 5x6 packageFeaturesOrder code VDSS RDS(on) max IDSTL120N2VH5 20 V
stl12n3llh5.pdf
STL12N3LLH5N-channel 30 V, 0.0079 , 12 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL12N3LLH5 30 V
stl12n65m2.pdf
STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HVAp
stl12p6f6.pdf
STL12P6F6P-channel 60 V, 0.13 typ., 12 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max IDSTL12P6F6 60 V 0.16 @ 10 V 12 A Very low on-resistance12 Very low gate charge34 High avalanche ruggedness Low gate drive power lossPowerFLAT 5x6Applications Switching applicati
stl120n4f6ag.pdf
STL120N4F6AG Automotive-grade N-channel 40 V, 2.9 m typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTL120N4F6AG 40 V 3.6 m 120 A 1234 Designed for automotive applications and AEC-Q101 qualified Very low on-resistance PowerFLAT 5x6 Very low gate charge
stl12n60m2.pdf
STL12N60M2 N-channel 600 V, 0.400 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N60M2 600 V 0.495 6.5 A 52 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV
stl12n65m5.pdf
STL12N65M5N-channel 650 V, 0.475 typ., 8.5 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL12N65M5 710 V 0.530 8.5 A Outstanding RDS(on)*area1 Extremely large avalanche performance23 Gate charge minimized4TM Very low intrinsic capacitancePowerFLAT 5x6 HV 100% ava
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050