STW3040 - Даташиты. Аналоги. Основные параметры

STW3040 High voltage fast-switching NPN power transistor . Features High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Wide safe operating areas (forward and reverse biased) 3 2 1 Applications TO-247 Switching mode power supplies Figure 1. Internal schematic diagram Description The STW3040 is manufactured using di

STP30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W Gate charge minimized 3 3 2 2 1 1 100% avalanche tested TO-220 TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V

STP30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W Gate charge minimized 3 3 2 2 1 1 100% avalanche tested TO-220 TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me

STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) VDSS Type ID (@Tjmax) max 3 3 1 2 1 STB30NM50N 550 V

STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, STW30N65M5 N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB30N65M5 710 V

STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V

STW30NM60D N-channel 600V - 0.125 - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS(on) ID STW30NM60D 600V

STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 T

STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 T

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me

isc N-Channel MOSFET Transistor STW30N65M5 FEATURES Static Drain-Source On-Resistance R = 0.139 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA