Биполярный транзистор RN1972FS - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RN1972FS
Маркировка: JH
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Максимальная рассеиваемая мощность (Pc): 0.05 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 1.2 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT963 FS6
RN1972FS Datasheet (PDF)
rn1972fs rn1973fs.pdf
RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mmTwo devices are incorporated into a fine pitch small mold (6-pin) package 1.00.050.80.05 0.10.050.10.05 Incorporating a bias resistor into a transi
rn1972hfe rn1973hfe.pdf
RN1972HFE,RN1973HFE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972HFE,RN1973HFE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc
rn1972ct rn1973ct.pdf
RN1972CT,RN1973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972CT,RN1973CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor i
rn1970fs rn1971fs.pdf
RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 1.00.05package 0.80.05 0.10.050.10.05 Incorporating a bias resistor into a tr
rn1970fe-rn1971fe.pdf
RN1970FE,RN1971FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FE,RN1971FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing
rn1970ct rn1971ct.pdf
RN1970CT, RN1971CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970CT,RN1971CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a trans
rn1970-rn1971.pdf
RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2970~R
rn1973.pdf
RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (6-pin) package Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enable
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Список транзисторов
Обновления
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