Справочник транзисторов. 2N5737

 

Биполярный транзистор 2N5737 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5737
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO3

 Аналоги (замена) для 2N5737

 

 

2N5737 Datasheet (PDF)

 ..1. Size:36K  inchange semiconductor
2n5737.pdf

2N5737 2N5737

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT

 9.1. Size:51K  inchange semiconductor
2n5739.pdf

2N5737 2N5737

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5739 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RAT

 9.2. Size:129K  inchange semiconductor
2n5732.pdf

2N5737 2N5737

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5732 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

 9.3. Size:36K  inchange semiconductor
2n5738.pdf

2N5737 2N5737

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5738 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA

 9.4. Size:129K  inchange semiconductor
2n5734.pdf

2N5737 2N5737

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5734 DESCRIPTION With TO-3 package High current capability APPLICATIONS For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

Другие транзисторы... 2N573 , 2N5730 , 2N5731 , 2N5732 , 2N5733 , 2N5734 , 2N5735 , 2N5736 , S9014 , 2N5738 , 2N5739 , 2N574 , 2N5740 , 2N5741 , 2N5742 , 2N5743 , 2N5744 .

 

 
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