Биполярный транзистор RN2109ACT
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: RN2109ACT
Маркировка: C8
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 2.1
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15
V
Макcимальный постоянный ток коллектора (Ic): 0.08
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 0.9
pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора:
SOT883
CST3
Аналоги (замена) для RN2109ACT
RN2109ACT
Datasheet (PDF)
..1. Size:144K toshiba
rn2107act rn2109act.pdf RN2107ACT~RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107ACT,RN2108ACT,RN2109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Top View 0.60.050.50.03 Extra small package (CST3) is applicable for extra high density fabrication. Incorporating a bias resistor
8.1. Size:177K toshiba
rn2107 rn2108 rn2109.pdf RN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107~RN1109 Equivalent Circuit and Bias Resister Values T
8.2. Size:162K toshiba
rn2107fs rn2108fs rn2109fs.pdf RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip
8.3. Size:146K toshiba
rn2107ft-rn2109ft.pdf RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p
8.4. Size:194K toshiba
rn2107mfv rn2108mfv rn2109mfv.pdf RN2107MFVRN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.80.05enabling the ma
8.5. Size:144K toshiba
rn2107ct rn2109ct.pdf RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Unit: mmInverter Circuit Applications Top View Interface Circuit Applications 0.60.050.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
8.6. Size:326K toshiba
rn2107f rn2109f.pdf RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister Valu
8.7. Size:82K toshiba
rn2107f-rn2109f.pdf RN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister V
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