RN2109ACT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2109ACT  📄📄 

Código: C8

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT883 CST3

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RN2109ACT datasheet

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RN2107FT RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

Otros transistores... RN2107FS, RN2107MFV, RN2107, RN2108ACT, RN2108CT, RN2108FS, RN2108MFV, RN2108, 2SA1015, RN2109CT, RN2109FS, RN2109F, RN2109MFV, RN2109, RN2110ACT, RN2110CT, RN2110FS