Биполярный транзистор 2N5745 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5745
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 50 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2N5745 Datasheet (PDF)
2n4398 2n4399 2n5745.pdf
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Order this documentMOTOROLAby 2N4398/DSEMICONDUCTOR TECHNICAL DATA2N4347(See 2N3442)PNP Silicon High-PowerTransistors2N4398. . . designed for use in power amplifier and switching circuits. Low CollectorEmitter Saturation Voltage 2N4399IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,992N5745IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745
2n5745.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and
2n4398 2n4399 2n5745.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o
2n5743.pdf
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2N5743Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n5741.pdf
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2N5741Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5741 2n5742.pdf
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Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximu
2n5743 2n5744.pdf
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Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute ma
2n5744.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N5744DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n5741 2n5742.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximu
2n5743.pdf
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isc Silicon PNP Power Transistor 2N5743DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2n5743 2n5744.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector saturation voltage Fast switching speed APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 Collectorl Absolute
2n5740.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA
Другие транзисторы... 2N5738 , 2N5739 , 2N574 , 2N5740 , 2N5741 , 2N5742 , 2N5743 , 2N5744 , 8050 , 2N574A , 2N575 , 2N5758 , 2N5759 , 2N575A , 2N576 , 2N5760 , 2N5761 .
History: 2N677B