Справочник транзисторов. 2N5772

 

Биполярный транзистор 2N5772 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5772
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 350 MHz
   Ёмкость коллекторного перехода (Cc): 5 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO92

 Аналоги (замена) для 2N5772

 

 

2N5772 Datasheet (PDF)

 ..1. Size:28K  fairchild semi
2n5772.pdf

2N5772
2N5772

2N5772NPN Switching Transistor Sourced from process 22.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continued 300 mATSTG Operating and Storage Junction Temperature Range -

 ..2. Size:73K  central
2n3646 2n5772 pn3646.pdf

2N5772

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.1. Size:585K  fairchild semi
2n5771 mmbt5771.pdf

2N5772
2N5772

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

 9.2. Size:708K  fairchild semi
2n5771.pdf

2N5772
2N5772

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

 9.3. Size:295K  fairchild semi
2n5770.pdf

2N5772
2N5772

Discrete POWER & SignalTechnologies2N5770C TO-92BENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15

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2n5780 2n5780 2n5777.pdf

2N5772

 9.5. Size:57K  njs
2n5779 2n5779 2n5778.pdf

2N5772

 9.6. Size:57K  njs
2n5777.pdf

2N5772

 9.7. Size:57K  njs
2n5778.pdf

2N5772

 9.8. Size:65K  central
2n5910 pn5910 2n5771.pdf

2N5772

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.9. Size:64K  advanced-semi
2n5777.pdf

2N5772

 9.10. Size:242K  cdil
2n5770.pdf

2N5772
2N5772

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770TO-92Plastic PackageCBEVHF/UHF Amplifier Mixer and Oscillator ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 15 VCollector Base Voltage VCBO 30 VVE

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