2SA1939 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196ABSOLUTE MAXIMUM RATING (Ta=25cc)ccCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collec

JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbo

isc Silicon PNP Power Transistor 2SA1939DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC5196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm High voltage: VCEO = -600 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1 Base current IB

2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit: mm Low saturation voltage: VCE (sat) = -0.4 V (max) High-speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitt

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -180 VCollector-emitter voltage VCEO -180 VEmitter-base v

2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d

2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)

2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171(3DA5171) Features: High f , complementary pair with 2SC5171(3DA5171). T/Absolute maximum ratings(Ta=25) Sym

2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)

2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features: High f , complementary pair with 2SC5171I(3DA5171I). T/Absolute maximum ratings(Ta=25)

isc Silicon PNP Power Transistor 2SA1931DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1932DESCRIPTIONHigh collector breakdown voltageComplementary to 2SC5174100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV