2SC5307. Аналоги и основные параметры
Наименование производителя: 2SC5307
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: PW-MINI SC62
Аналоги (замена) для 2SC5307
- подборⓘ биполярного транзистора по параметрам
2SC5307 даташит
..2. Size:877K kexin
2sc5307.pdf 
SMD Type Transistors NPN Transistors 2SC5307 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking AL 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit
8.2. Size:40K sanyo
2sc5303.pdf 
Ordering number ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5303] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2
8.3. Size:43K sanyo
2sc5304ls.pdf 
Ordering number ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5304] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55
8.4. Size:96K sanyo
2sc5301.pdf 
Ordering number EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5301] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1
8.5. Size:36K sanyo
2sc5304.pdf 
Ordering number EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI
8.6. Size:98K sanyo
2sc5300.pdf 
Ordering number EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5300] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2
8.7. Size:89K sanyo
2sc5302.pdf 
Ordering number EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
8.8. Size:42K sanyo
2sc5305ls.pdf 
Ordering number ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55
8.9. Size:34K sanyo
2sc5305.pdf 
Ordering number EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI
8.10. Size:156K utc
2sc5305.pdf 
UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1 * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1 Base 2 Colle
8.11. Size:211K inchange semiconductor
2sc5302.pdf 
isc Silicon NPN Power Transistor 2SC5302 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
8.12. Size:212K inchange semiconductor
2sc5305.pdf 
isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION High Breakdown Voltage V = 1200V (Min) (BR)CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collect
Другие транзисторы: 2SC5197, 2SC5198, 2SC5199, 2SC5201, 2SC5208, 2SC5242, 2SC5266A, 2SC5279, BD222, 2SC5351, 2SC5352, 2SC5353, 2SC5354, 2SC5355, 2SC5356, 2SC5358, 2SC5359
