2SC5307 Specs and Replacement
Type Designator: 2SC5307
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: PW-MINI SC62
- BJT ⓘ Cross-Reference Search
2SC5307 datasheet
..2. Size:877K kexin
2sc5307.pdf 
SMD Type Transistors NPN Transistors 2SC5307 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking AL 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit... See More ⇒
8.2. Size:40K sanyo
2sc5303.pdf
Ordering number ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5303] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2... See More ⇒
8.3. Size:43K sanyo
2sc5304ls.pdf
Ordering number ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5304] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55... See More ⇒
8.4. Size:96K sanyo
2sc5301.pdf
Ordering number EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5301] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1... See More ⇒
8.5. Size:36K sanyo
2sc5304.pdf
Ordering number EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI ... See More ⇒
8.6. Size:98K sanyo
2sc5300.pdf
Ordering number EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5300] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2... See More ⇒
8.7. Size:89K sanyo
2sc5302.pdf
Ordering number EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0... See More ⇒
8.8. Size:42K sanyo
2sc5305ls.pdf
Ordering number ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55... See More ⇒
8.9. Size:34K sanyo
2sc5305.pdf
Ordering number EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI ... See More ⇒
8.10. Size:156K utc
2sc5305.pdf
UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1 * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1 Base 2 Colle... See More ⇒
8.11. Size:211K inchange semiconductor
2sc5302.pdf
isc Silicon NPN Power Transistor 2SC5302 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V... See More ⇒
8.12. Size:212K inchange semiconductor
2sc5305.pdf
isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION High Breakdown Voltage V = 1200V (Min) (BR)CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collect... See More ⇒
Detailed specifications: 2SC5197
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