2SC5354 - описание и поиск аналогов

isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage V = 800 V CEO High DC current gain h = 15 (min) (I = 0.15 A) FE C Maximum Ra

2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifier s output stage. Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter volta

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage V = 400 V CEO High DC current gain h = 20 (min) FE Maximum Ratings (Ta = 25 C)

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) * High collectors breakdown voltage VCEO = 700V 1

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. FEATURES 1 1 * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) TO-220F1 TO-251 * High collectors breakdown

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5353 DESCRIPTION Collector Emitter Sustaining Voltage V = 800V(Min.) CEO(SUS) Low Collector Saturation Voltage V =1V(Max) @ I = 1.2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and low cost switch-mode power

isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5359 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1987 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5358 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1986 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco