isc Silicon NPN Power Transistor 2SC5354DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage: V = 800 V CEO High DC current gain: h = 15 (min) (I = 0.15 A) FE CMaximum Ra

2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter volta

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 20 (min) FEMaximum Ratings (Ta = 25C)

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 11TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 11TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) * High collectors breakdown voltage: VCEO = 700V 1

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1TRANSISTOR TO-126TO-126C DESCRIPTION 11TO-220 TO-220FSwitching Regulator and High Voltage Switching ApplicationsHigh-Speed DC-DC Converter Applications. FEATURES 11* Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) TO-220F1 TO-251* High collectors breakdown

2SC535Silicon NPN Epitaxial PlanarApplicationVHF amplifier, mixer, local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC535Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5353DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 800V(Min.)CEO(SUS)Low Collector Saturation Voltage: V =1V(Max) @ I = 1.2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and low costswitch-mode power

isc Silicon NPN Power Transistor 2SC5352DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5359DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1987100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5358DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1986100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco