Биполярный транзистор 2SC6087
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC6087
Маркировка: C6087
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 160
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 2.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 14
pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TPS
Аналоги (замена) для 2SC6087
2SC6087
Datasheet (PDF)
..1. Size:209K toshiba
2sc6087.pdf 
2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCEX 160 VColle
8.1. Size:51K sanyo
2sc6089.pdf 
Ordering number : ENA0995 2SC6089SANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6089Output ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C
8.2. Size:52K sanyo
2sc6082.pdf 
Ordering number : ENA0279 2SC6082SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed Switching Ap-2SC6082plicationsApplications High-speed switching applications (switching regulator, driver circuit).Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
8.3. Size:236K onsemi
2sc6082.pdf 
Ordering number : ENA0279B2SC6082Bipolar Transistorhttp://onsemi.com( )50V, 15A, Low VCE sat NPN TO-220F-3SGApplications High-speed switching applications (switching regulator, driver circuit)Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratin
8.4. Size:211K inchange semiconductor
2sc6082 .pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCB
8.5. Size:209K inchange semiconductor
2sc6082.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCB
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