2SC6087 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6087  📄📄 

Código: C6087

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.3 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TPS

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2SC6087 datasheet

 ..1. Size:209K  toshiba
 2sc6087.pdf pdf_icon

2SC6087

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle

 8.1. Size:51K  sanyo
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2SC6087

Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C

 8.2. Size:52K  sanyo
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2SC6087

Ordering number ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

 8.3. Size:236K  onsemi
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2SC6087

Ordering number ENA0279B 2SC6082 Bipolar Transistor http //onsemi.com ( ) 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratin

MOSTRAR MÁS

Otros transistores... 2SC6061, 2SC6062, 2SC6072, 2SC6075, 2SC6076, 2SC6077, 2SC6078, 2SC6079, 8550, 2SC6124, 2SC6125, 2SC6126, 2SC6127, 2SC6136, 2SC6139, 2SC6140, 2SC6142