Биполярный транзистор TTC012 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TTC012
Маркировка: C012
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 375 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: NEW-PW-MOLD2
TTC012 Datasheet (PDF)
ttc012.pdf
TTC012Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC012TTC012TTC012TTC0121. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High speed switching : tf = 0.15 s (typ.) (IC = 0.5 A)(2) High collec
ttc011b.pdf
TTC011B NPNTTC011BTTC011BTTC011BTTC011B1. 1. 1. 1. 2. 2. 2. 2. (1) : VCEO = 230 V ()(2) : Cob = 20 pF ()(3)
ttc011.pdf
TTC011Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC011TTC011TTC011TTC0111. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 230 V(2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A)3. Packaging and Interna
ttc015b.pdf
TTC015BBipolar Transistors Silicon NPN Epitaxial TypeTTC015BTTC015BTTC015BTTC015B1. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A)(2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A)(3
ttc014.pdf
TTC014Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC014TTC014TTC014TTC0141. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A)(2) High collector
ttc017.pdf
TTC017Bipolar Transistors Silicon NPN Epitaxial TypeTTC017TTC017TTC017TTC0171. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A)(2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A)(3) High-speed
ttc013.pdf
TTC013Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC013TTC013TTC013TTC0131. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 350 V(2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)3. Packaging and Interna
ttc016.pdf
TTC016Bipolar Transistors Silicon NPN Epitaxial TypeTTC016TTC016TTC016TTC0161. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A)(2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 3
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: MMBT2484LT1G
History: MMBT2484LT1G
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050