TTC012 Specs and Replacement
Type Designator: TTC012
SMD Transistor Code: C012
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 375 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: NEW-PW-MOLD2
TTC012 Substitution
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TTC012 datasheet
TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 TTC012 TTC012 TTC012 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High speed switching tf = 0.15 s (typ.) (IC = 0.5 A) (2) High collec... See More ⇒
TTC011B NPN TTC011B TTC011B TTC011B TTC011B 1. 1. 1. 1. 2. 2. 2. 2. (1) VCEO = 230 V ( ) (2) Cob = 20 pF ( ) (3) ... See More ⇒
TTC011 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 TTC011 TTC011 TTC011 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching LCD Backlighting 2. Features 2. Features 2. Features 2. Features (1) High collector breakdown voltage VCEO = 230 V (2) High DC current gain hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Interna... See More ⇒
TTC015B Bipolar Transistors Silicon NPN Epitaxial Type TTC015B TTC015B TTC015B TTC015B 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage VCE(sat) = 0.5 V (max) (IC = 1A) (3... See More ⇒
Detailed specifications: TTC0002, TTC003, TTC004, TTC005, TTC007, TTC008, TTC009, TTC011, 2N3904, TTC013, TTC13003L, TTC5200, 2SC4250FV, 2SC4915, 2SC5064, 2SC5065, 2SC5066
Keywords - TTC012 pdf specs
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