Биполярный транзистор 2SC5088
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5088
Маркировка: MCO_MCY
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.08
A
Предельная температура PN-перехода (Tj): 125
°C
Граничная частота коэффициента передачи тока (ft): 7000
MHz
Ёмкость коллекторного перехода (Cc): 1.1
pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: USQ
Аналоги (замена) для 2SC5088
2SC5088
Datasheet (PDF)
..1. Size:481K toshiba
2sc5088.pdf 
2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.2. Size:474K toshiba
2sc5084.pdf 
2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.3. Size:465K toshiba
2sc5089.pdf 
2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
8.4. Size:471K toshiba
2sc5085.pdf 
2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.5. Size:100K toshiba
2sc5087r.pdf 
2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
8.6. Size:478K toshiba
2sc5084o 2sc5084y.pdf 
2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VBase
8.7. Size:474K toshiba
2sc5086.pdf 
2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.8. Size:125K toshiba
2sc5086ft.pdf 
2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
8.9. Size:476K toshiba
2sc5087.pdf 
2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
8.10. Size:25K hitachi
2sc5081.pdf 
2SC5081Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz Typ High gain, low noise figurePG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC5081Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltag
8.11. Size:48K hitachi
2sc5080.pdf 
2SC5080Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz Typ High gain, low noise figurePG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector2. Emitter43. Base4. Emitter2SC5080Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage V
8.12. Size:1495K kexin
2sc5084.pdf 
SMD Type TransistorsNPN Transistors2SC5084SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
8.13. Size:1856K kexin
2sc5089.pdf 
SMD Type TransistorsNPN Transistors2SC5089SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=40mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
8.14. Size:2609K kexin
2sc5086.pdf 
SMD Type TransistorsNPN Transistors2SC5086SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features Collector Current Capability IC=80mA3 Collector Emitter Voltage VCEO=12V0.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage
8.15. Size:186K inchange semiconductor
2sc5084.pdf 
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5084DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applicat
8.16. Size:186K inchange semiconductor
2sc5089.pdf 
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5089DESCRIPTIONHigh Gain Bandwidth Productf = 10 GHz TYP.THigh Gain, Low Noise FigureS 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applica
8.17. Size:179K inchange semiconductor
2sc508.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC508DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 18
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