2SC5088 Specs and Replacement
Type Designator: 2SC5088
SMD Transistor Code: MCO_MCY
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: USQ
- BJT ⓘ Cross-Reference Search
2SC5088 datasheet
..1. Size:481K toshiba
2sc5088.pdf 
2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.2. Size:474K toshiba
2sc5084.pdf
2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.3. Size:465K toshiba
2sc5089.pdf
2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V ... See More ⇒
8.4. Size:471K toshiba
2sc5085.pdf
2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.5. Size:100K toshiba
2sc5087r.pdf
2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V ... See More ⇒
8.6. Size:478K toshiba
2sc5084o 2sc5084y.pdf
2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base ... See More ⇒
8.7. Size:474K toshiba
2sc5086.pdf
2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.8. Size:125K toshiba
2sc5086ft.pdf
2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 ... See More ⇒
8.9. Size:476K toshiba
2sc5087.pdf
2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B... See More ⇒
8.10. Size:25K hitachi
2sc5081.pdf
2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltag... See More ⇒
8.11. Size:48K hitachi
2sc5080.pdf
2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage V... See More ⇒
8.12. Size:1495K kexin
2sc5084.pdf
SMD Type Transistors NPN Transistors 2SC5084 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle... See More ⇒
8.13. Size:1856K kexin
2sc5089.pdf
SMD Type Transistors NPN Transistors 2SC5089 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=40mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
8.14. Size:2609K kexin
2sc5086.pdf
SMD Type Transistors NPN Transistors 2SC5086 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features Collector Current Capability IC=80mA 3 Collector Emitter Voltage VCEO=12V 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage... See More ⇒
8.15. Size:186K inchange semiconductor
2sc5084.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5084 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applicat... See More ⇒
8.16. Size:186K inchange semiconductor
2sc5089.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5089 DESCRIPTION High Gain Bandwidth Product f = 10 GHz TYP. T High Gain, Low Noise Figure S 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applica... See More ⇒
8.17. Size:179K inchange semiconductor
2sc508.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC508 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 18... See More ⇒
Detailed specifications: 2SC5064, 2SC5065, 2SC5066, 2SC5084, 2SC5085, 2SC5086, 2SC5087, 2SC5087R, A1015, 2SC5092, 2SC5095, 2SC5096, 2SC5106, 2SC5107, 2SC5108, 2SC5317FT, 2SC5319
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