MT3S11FS. Аналоги и основные параметры
Наименование производителя: MT3S11FS
Маркировка: 8
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.085 W
Макcимально допустимое напряжение коллектор-база (Ucb): 13 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.04 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4500 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: FSM
Аналоги (замена) для MT3S11FS
- подборⓘ биполярного транзистора по параметрам
MT3S11FS даташит
8.1. Size:161K toshiba
mt3s111 .pdf 
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T
8.2. Size:201K toshiba
mt3s113.pdf 
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)
8.3. Size:156K toshiba
mt3s111tu .pdf 
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Ab
8.4. Size:161K toshiba
mt3s111p.pdf 
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.
8.5. Size:273K toshiba
mt3s111tu.pdf 
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA -
8.6. Size:203K toshiba
mt3s113 .pdf 
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)
8.7. Size:159K toshiba
mt3s111.pdf 
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T
8.8. Size:197K toshiba
mt3s113p.pdf 
MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF = 1.15dB (typ.) (@ f=1GHz) High Gain S21e 2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC - JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g
8.9. Size:176K toshiba
mt3s113tu.pdf 
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3
8.10. Size:163K toshiba
mt3s111p .pdf 
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.
8.11. Size:178K toshiba
mt3s113tu .pdf 
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3
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