All Transistors. MT3S11FS Datasheet

 

MT3S11FS Datasheet and Replacement


   Type Designator: MT3S11FS
   SMD Transistor Code: 8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.085 W
   Maximum Collector-Base Voltage |Vcb|: 13 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 4500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: FSM
 

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MT3S11FS Datasheet (PDF)

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MT3S11FS

MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mmVHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications Superior performance in oscillator applications. 1 Superior noise characteristics 3:NF = 2.4 dB, |S21e|2 = 3.5 dB (f =2GHz) 2 0.80.050.10.05 1.00.050.10.05Absolute Maximum Ratings (Ta = 25

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 mt3s111 .pdf pdf_icon

MT3S11FS

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T

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 mt3s113.pdf pdf_icon

MT3S11FS

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

 8.3. Size:156K  toshiba
 mt3s111tu .pdf pdf_icon

MT3S11FS

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC -JEITA -Ab

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Keywords - MT3S11FS transistor datasheet

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 MT3S11FS equivalent finder
 MT3S11FS lookup
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