2SD1410A datasheet, аналоги, основные параметры
Наименование производителя: 2SD1410A 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hFE): 2000
Корпус транзистора: TO220NIS
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Аналоги (замена) для 2SD1410A
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2SD1410A даташит
7.2. Size:212K inchange semiconductor
2sd1410.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applicati
8.8. Size:112K renesas
rej03g0788 2sd1419ds-1.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:112K renesas
rej03g0787 2sd1418ds-1.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.10. Size:31K hitachi
2sd1418.pdf 
2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector
8.11. Size:25K hitachi
2sd1419.pdf 
2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collecto
8.12. Size:905K kexin
2sd1418.pdf 
SMD Type Transistors NPN Transistors 2SD1418 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1025 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu
8.13. Size:900K kexin
2sd1419.pdf 
SMD Type Transistors NPN Transistors 2SD1419 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1026 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti
8.14. Size:215K inchange semiconductor
2sd1412.pdf 
isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SB1019 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.
8.15. Size:212K inchange semiconductor
2sd1413.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1413 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Complement to Type 2SB1023 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
8.16. Size:218K inchange semiconductor
2sd1414.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1414 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Complement to Type 2SB1024 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
8.17. Size:214K inchange semiconductor
2sd1415.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1415 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB1020 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL
8.18. Size:215K inchange semiconductor
2sd1411.pdf 
isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1018 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.
8.19. Size:209K inchange semiconductor
2sd1415a.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1415A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch
8.20. Size:213K inchange semiconductor
2sd1416.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
8.21. Size:212K inchange semiconductor
2sd1417.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage Complement to Type 2SB1022 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier and switchin
Другие транзисторы: 2SB1617, 2SB1640, 2SB1641, 2SB1642, 2SB1667SM, 2SB1682, 2SD1407A, 2SD1409A, D880, 2SD1411A, 2SD1412A, 2SD1415A, 2SD2075A, 2SD2206A, 2SD2406, 2SD2414SM, 2SD2440
