2SD1411A - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SD1411A Даташит. Аналоги

   Наименование производителя: 2SD1411A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Ёмкость коллекторного перехода (Cc): 200 pf
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO220NIS

Аналог (замена) для 2SD1411A

- подбор ⓘ биполярного транзистора по параметрам

2SD1411A Datasheet (PDF)

..1. Size:216K toshiba
2sd1411a.pdf pdf_icon

7.1. Size:184K toshiba
2sd1411.pdf pdf_icon

7.2. Size:215K inchange semiconductor
2sd1411.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1411DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1018Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

8.1. Size:184K toshiba
2sd1412.pdf pdf_icon

8.2. Size:183K toshiba
2sd1410a.pdf pdf_icon

8.3. Size:183K toshiba
2sd1415.pdf pdf_icon

8.4. Size:163K toshiba
2sd1410.pdf pdf_icon

8.5. Size:216K toshiba
2sd1412a.pdf pdf_icon

8.6. Size:213K toshiba
2sd1415a.pdf pdf_icon

8.7. Size:38K toshiba
2sd1417.pdf pdf_icon

8.8. Size:112K renesas
rej03g0788 2sd1419ds-1.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.9. Size:112K renesas
rej03g0787 2sd1418ds-1.pdf pdf_icon

8.10. Size:31K hitachi
2sd1418.pdf pdf_icon

2SD1418Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1025OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1418Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5VCollector

8.11. Size:25K hitachi
2sd1419.pdf pdf_icon

2SD1419Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1026OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1419Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 5VCollecto

8.12. Size:905K kexin
2sd1418.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD1418 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB10250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

8.13. Size:900K kexin
2sd1419.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD14191.70 0.1 Features Low frequency power amplifier Complementary to 2SB10260.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

8.14. Size:215K inchange semiconductor
2sd1412.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1412DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOComplement to Type 2SB1019Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

8.15. Size:212K inchange semiconductor
2sd1413.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1413DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEComplement to Type 2SB1023Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

8.16. Size:218K inchange semiconductor
2sd1414.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1414DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEComplement to Type 2SB1024Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

8.17. Size:214K inchange semiconductor
2sd1415.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1415DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB1020Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

8.18. Size:212K inchange semiconductor
2sd1410.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1410DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicati

8.19. Size:209K inchange semiconductor
2sd1415a.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1415ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch

8.20. Size:213K inchange semiconductor
2sd1416.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1416DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB1021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

8.21. Size:212K inchange semiconductor
2sd1417.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1417DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation VoltageComplement to Type 2SB1022Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier and switchin

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .