All Transistors. 2SD1411A Datasheet

 

2SD1411A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1411A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220NIS

2SD1411A Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1411A Datasheet (PDF)

1.1. 2sd1411a.pdf Size:216K _toshiba

2SD1411A
2SD1411A



3.1. 2sd1411.pdf Size:184K _toshiba

2SD1411A
2SD1411A



3.2. 2sd1411.pdf Size:171K _inchange_semiconductor

2SD1411A
2SD1411A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complementary to 2SB1018 APPLICATIONS Ў¤ Power amplifier applications Ў¤ High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

Datasheet: D33D22 , D33D23 , D33D24 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , 2SC945 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , D33J24 .

 
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