2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit: mmHigh-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit: mm High Speed Switching Applications. High voltage: VCBO = 1700 V Low saturation voltage: V = 5 V (max) CE (sat) High speed: t = 0.8 s (max) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector

Ordering number : ENN69602SB1683 / 2SD26392SB1683 : PNP Epitaxial Planar Silicon Transistor2SD2639 : NPN Triple Diffused Planar Silicon Transistor2SB1683 / 2SD2639140V / 12A, AF 60W Output ApplicationsFeaturesPackage Dimensions Wide ASO because of on-chip ballast resistance.unit : mm Good dependence of fT on current and good HF2010Ccharacteristic.[2SB1683 / 2SD26

Ordering number : ENN6474B2SD2634NPN Triple Diffused Planar Silicon Transistor2SD2634Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2634] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0

Ordering number:ENN6449NPN Epitaxial Planar Silicon Darlington Transistor2SD2635120V / 2A Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit:mm2064AFeatures [2SD2635]2.5 Darlington connection1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature.0.60.9 0.51 2 30.451 :

Power Transistor 2SD2633Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2I AV 200 V CBO V =200V 100maxCBO CB10.03.32.8C0.5V 150 V I V =6V 10max mACEO EBO EBI =50mAV 6 V V C 150min VEBO CEOI 8 A h V =2V, I =6A 2000minC FE CE CI 1 A V I =6

isc Silicon NPN Darlington Power Transistor 2SD2633DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V =1.5V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general pur

isc Silicon NPN Power Transistor 2SD2634DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME