Биполярный транзистор EC3H07BA - описание производителя. Основные параметры. Даташиты.
Наименование производителя: EC3H07BA
Маркировка: G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 9 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 4 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 12500 MHz
Ёмкость коллекторного перехода (Cc): 0.55 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: ECSP1006-3
EC3H07BA Datasheet (PDF)
ec3h07ba.pdf
Ordering number : ENA1069 EC3H07BASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S Band Low-Noise AmplifierEC3H07BAand OSC ApplicationsFeatures Low noise : NF=1.5dB typ (f=2GHz). High cutoff frequency : fT=10GHz typ (VCE=1V).fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz). Ultraminiat
ec3h07b.pdf
Ordering number : ENN6578EC3H07BNPN Epitaxial Planar Silicon TransistorEC3H07BUHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2183: fT=12.5GHz typ (VCE=3V).0.35[EC3H07B] Low operating voltage.0.20.15 0.15 High gain : S21e2=
ec3h02c.pdf
Ordering number : ENN6579EC3H02CNPN Epitaxial Planar Silicon TransistorEC3H02CVHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit : mm High gain :S21e2=12dB typ (f=1GHz). 2184 High cutoff frequency : fT=7GHz typ.[EC3H02C] Ultraminiature (1008 size) and thin (0.6mm)0.5leadless package
ec3h04b.pdf
Ordering number : ENN6577EC3H04BNPN Epitaxial Planar Type Silicon TransistorEC3H04BHigh-Frequency Low-Noise Amplifierand OSC ApplicationsFeaturesPackage Dimensions Low noise : NF=1.7dB typ (f=2GHz).unit : mm High cut-off frequency : fT=8GHz typ (VCE=1V).2183 Low operating voltage.0.35[EC3H04B] Ultraminiature (1006 size) and thin (0.5mm)0.20.15 0.15
ec3h09b.pdf
Ordering number : ENN7269EC3H09BNPN Epitaxial Planar Silicon TransistorEC3H09BHigh-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2183: fT=11.2GHz typ (VCE=3V).[EC3H09B] Low operating voltage.0.35 Ultraminiature (1006 size) and thin (0
ec3h05b.pdf
Ordering number : ENN6574EC3H05BNPN Epitaxial Planar Type Silicon TransistorEC3H05BVHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeaturesPackage Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit : mm High gain : S21e2=13dB typ (f=1GHz).2183 Hige cutoff frequency : fT=9.0GHz typ.0.35[EC3H05B] Ultraminiature (1006 size) and thin (0.5mm) 0.20
ec3h04c.pdf
Ordering number : ENN6580EC3H04CNPN Epitaxial Planar Silicon TransistorEC3H04CHigh-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.7dB typ (f=2GHz). unit : mm Hige cut-off frequency : fT=8GHz typ (VCE=1V). 2184 Low operating voltage.[EC3H04C] Ultraminiature (1008 size) and thin (0.6mm) leadlesspackage. 0.50.2 0.
ec3h02b.pdf
Ordering number:ENN6523NPN Epitaxial Planar Silicon TransistorEC3H02BVHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2183 High cutoff frequency : fT=7GHz typ.[EC3H02B] Ultrasmall (1006size), slim (0.5mm) leadless pack-0.35age.0.20.15
ec3h03b.pdf
Ordering number : ENN6576EC3H03BNPN Epitaxial Planar Type Silicon TransistorEC3H03BVHF to UHF Wide-Band Low-Noise Amplifierand OSC ApplicationsFeaturesPackage Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit : mm High gain : S21e2=12dB typ (f=1GHz).2183 High cut-off frequency : fT=7.5GHz typ.0.35[EC3H03B] Ultraminiature (1006 size) and thin (0.5m
ec3h06b.pdf
Ordering number:ENN6524NPN Epitaxial Planar Silicon TransistorEC3H06BUHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21832 High gain : S21e =10dB typ (f=1.5GHz).[EC3H06B] High cutoff frequency : fT=11GHz typ.0.35 Low voltage, low current operation.
ec3h01b.pdf
Ordering number : ENN6573EC3H01BNPN Epitaxial Planar Silicon TransistorEC3H01BVHF Band Low-Noise Ampliferand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.8dB typ (f=150MHz). unit : mm High gain : S21e2=16dB typ (f=150MHz). 2183 Ultraminiature (1006 size) and thin (0.5mm) leadless0.35[EC3H01B]0.2package.0.15 0.150.052130.050.
ec3h02ba.pdf
Ordering number : ENA1064B EC3H02BASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-NoiseEC3H02BAAmplifier ApplicationsFeatures Low noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free com
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050